| 摘要 |
PURPOSE:To eliminate the improper electric characteristics of a semiconductor element due to an improper contacting hole on a metal polyside by connecting the polyside, metal silicide or a high melting point metal and aluminum wirings through a polycrystalline silicon. CONSTITUTION:The polycrystalline silicon 3 and further a metal polyside 4 formed on the silicon 3 are formed on a field oxide film 2 formed selectively on the surface of a silicon substrate 1. Then, an interlayer film 5 is formed thinner than the normal interlayer film. Then, the first contacting hole 6 is formed by selectively etching by photolithographic technique. Then, the polycrystalline silicon is bonded, and selectively etched by the photolithographic technique to form the second polycrystalline silicon 7 for coating at least the contacting hole. Then, an interlayer film 8 is formed in a thickness necessary together with the film 5. Then, the second contacting hole 9 which arrives at the silicon 7 is formed by selectively etching, and aluminum wirings 10 are bonded and formed.
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