| 发明名称 |
MANUFACTURE OF PHOTOSENSITIVE SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A photosensitive semiconductor device is provided comprising transparent gates, whose side walls are made from silicide and which, apart from these side walls, are formed from polycrystalline silicon.</p> |
| 申请公布号 |
JPS61272976(A) |
申请公布日期 |
1986.12.03 |
| 申请号 |
JP19860117145 |
申请日期 |
1986.05.21 |
| 申请人 |
THOMSON CSF |
发明人 |
PIEERU BURANSHIYAARU;JIYAN POORU KORUTO |
| 分类号 |
H01L31/0248;H01L31/0224;H01L31/08;H01L31/10;H01L31/18 |
主分类号 |
H01L31/0248 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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