| 摘要 |
PURPOSE:To obtain a resist material having O2 RIE resistance and suitable for forming a positive type pattern by mixing a specified Si-contg. phenyl novolak resin with benzoquinone- or naphthoquinonediazide as a photosensitive agent (photocomposing agent) to form the resist material. CONSTITUTION:The Si-contg. phenyl novolak resin having repeating units each represented by one of the 6 formulae shown on the right, and benzoquinonediazide or naphthoquinonediazide as the photosensitive agent are mixed, and a preferable example of the resist material is a mixture of a phenol novolak resin, naphthoquinonediazide, and silylnitrile. A mixture of 100pts.wt. of the phenyl novolak resin, 20-30pts.wt. of naphthoquinonediazide as the photosensitive agent, and 5-50pts.wt. of methylsilylnitrile is used and as a solvent, a mixture of acetone is generally used. The upper limit of trimethylsilylnitrile to be used is about 50% of the phenol novolak resin matrix, and a ratio of naphthoquinonediazide to phenyl novolak resin is 1:2.5-1:3.0. |
