发明名称 GENERATING CIRCUIT FOR SEMICONDUCTOR BOOSTING SIGNAL
摘要 PURPOSE:To obtain a boosting signal in high speed with low power consumption by applying an output of a bootstrap circuit to a gate of the 5th transistor (TR) so as to decrease the ON resistance. CONSTITUTION:Precharging to a wire 19 is finished until a time T1. The potential of a wire 21 rises by the charging current from a charger 17 at a time T2, a MOS TR 15 is turned on and a potential of a signal phiA to be boosted is increased. The potential of the signal phiA reaches a value of threshold voltage VTH or over to turn on MOS TRs 14 and to discharge the wire 19 at a time T3. The bootstrap circuit I comprising of the MOS TRs 11, 12 starts operation at a time T4 to boost the potential of a wire 21 to a high voltage V' over the voltage V thereby reducing remarkably the ON resistance of a MOS TR 15.
申请公布号 JPS61260717(A) 申请公布日期 1986.11.18
申请号 JP19850104351 申请日期 1985.05.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIYAMOTO TAKAYUKI
分类号 H03K17/06;G11C11/40;H03K17/00;H03K19/017;H03K19/096 主分类号 H03K17/06
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