| 摘要 |
PURPOSE:To obtain the good-quality film by producing the neutral particles of a radical by the charge exchange due to collision of the first gas and the second gas with the controlled velocity of ions and controlling the ratio of number of ions and neutral particles of the first and the second gases by use of the second electrode to cause a reaction of those gases with the third gas. CONSTITUTION:Nitrogen gas is introduced from the first gas inlet system 32 and nitrogen gas and silane gas are introduced respectively from the second gas inlet system 63 and the third gas inlet system 78. The pressures in a plasma producing chamber 3, an excitation chamber 6, and a reaction chamber 7 are 2.6X10<-2>Pa, 0.13Pa, and 0.1Pa respectively. The deposition rate is 400Angstrom /min and the uniformity of deposition can be obtained on the substrate 74 of 10cm diameter. For the first - third gases, any substance which can become gas is available and any combination can be employed. Thickness of an edge plate, size and shape of a carry-out hole are arbitrary on condition that it can reflect a microwave and it can produce a difference in pressure among the plasma producing chamber, the excitation chamber and the reaction chamber. Consequently, the film of low temperature, good bonding property, and little damage can be formed by the extremely simple constitution of the device. |
