| 摘要 |
PURPOSE:To enable to read out the data read out from the main memory section with automatic method in the memory unit, or with correction and alteration as required, by modifying it with the data read out from the modification data memory section. CONSTITUTION:The memory section 11 can memorize j words for the data of one word n-bit, and the address is designated with the address input 12 in l-bit, and when the data readout signal 13 is inputted, the readout data 14 in n-bit is outputted and is given to the data modifying circuit. On the other hand, the modifying data memory section 16 consists of RAM which can memorize the data of one word m-bit by one word, and the same timing readout as the readout of the main memory unit 11 is made, or normal readout is made, and the data 17 is fed to the circuit 15. The circuit 15 modifies the data output 14 in n-bit with the data output 17 in m-bit, and the data resulted is outputted as the data output 18. The memory sections 11, 16 and the circuit 15 are constituted as an IC on the semiconductor substrate 24. |
