| 摘要 |
PURPOSE:To increase HFE extremely by constituting an emitter section and a collector section in a transistor by Si and organizing a base section by Ge. CONSTITUTION:An N-type Si wafer is used, and Ge is grown on the wafer through a MOCVD method. A P-type impurity is diffused to Ge. Si is grown through the MOCVD method, and an N-type impurity is diffused. Lastly, electrodes as an emitter, a base and a collector are formed through etching.
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