发明名称 BONDING WIRE FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To give high conductivity, and to increase breaking strength on the connection of a bonding wire by depositing copper or a copper alloy through electroplating or electroless plating and manufacturing the titled bonding wire. CONSTITUTION:Copper or a copper alloy is deposited directly through electroplating or electroless plating without using a seed wire and a bonding wire having 20-25mumphi is manufactured, or an extremely small-gage wire (5-20mumphi) acquired by drawing and machining copper, nickel, aluminum or an alloy based on these elements is employed as a seed wire, and the extremely small-gage wire is plated with copper, and a bonding wire having 20-25mumphi is prepared. Cracks are easy to be generated in a surface layer on a deformation by contact bonding in a plating layer simple substance having proper hardness and brittleness or the bonding wire with a plating outer layer, and novel metallic surface exposed to a joint surface is made wider than conventional drawing-machined bonding wires. Pin hole diffusions and grain boundary diffusions are conducted easily, thus also increasing adhesive strength remarkably.
申请公布号 JPS61214454(A) 申请公布日期 1986.09.24
申请号 JP19850053450 申请日期 1985.03.19
申请人 NIPPON MINING CO LTD 发明人 FUKAMACHI KAZUHIKO;KAWAUCHI SUSUMU
分类号 C25D7/04;H01L21/60;H01L23/49 主分类号 C25D7/04
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