| 摘要 |
PURPOSE:To enable to form a uniform insulating film on the surface layer part of a substrate at a high speed by a method wherein an energy beam to be absorbed into the substrate is made to irradiate on the substrate in a strong reactive gas atmosphere, an insulating layer composed of the constituting atoms of strong reactive gas and the constituting atoms of the substrate is formed on the surface of said substrate. CONSTITUTION:A silicon substrate 2 is placed in a reaction chamber 4 located in an insulating film forming device 1 as a substrate, O3/O2 gas is fed from a gas feeding hole 7, and the atmosphere of said reaction chamber 4 is formed into the state of O3/O2. The surface layer part only of the silicon substrate 2 is heated up by projecting the laser beam (a) of an XeCl excimer laser 3 which is made to irradiate through the intermediary of the quartz window 5 and the lens provided above the insulating film forming device 1. The reaction of the silicon atoms of the oxygen atoms of the O3/O2 gas and the silicon substrate 2 is generated on the surface part of the silicon substrate 2, and a silicon oxide film is formed on the surface layer of the silicon substrate 2.
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