| 摘要 |
PURPOSE:To realize a capacitive element occupying a small area and yet equipped with high dielectric strength by a method wherein a lamination of two or more layers of tantalum oxide film and electrode film is formed to cover the entire surface of a semiconductor substrate including a diffused layer. CONSTITUTION:Along the circumference of a P-type Si substrate 11, a thick field oxide film 13 is formed, and a portion surrounded by the field oxide film 13 on the surface of the substrate 11 is provided with an N<+> type diffused layer 12 which is in turn covered by a thin oxide film 14. A process follows wherein the entire surface containing said films and layers is provided with a coating of tantalum oxide film 15; a first electrode 16 is provided on the film 15 that is slightly smaller than the film 15; the entire surface is provided with a coating of another tantalum oxide film 17; the entire surface is covered with an SiO2 film 18; and, on the film 18, a second electrode 19 is formed that is quite similar in geometry to the electrode 16. Capacity 23 and capacity 24 are created between the first electrode 16 and second electrode 19 and between the first electrode 16 and the diffused layer 12, respectively, to be utilized as capacitive elements. In this way, a capacitive element equipped with a large capacity and yet highly capable of withstanding dielectric breakdown is realized owing to the high dielectric coefficient of tantalum oxide.
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