| 摘要 |
A semiconductor laser of the DH-type has a first and a second passive layer, an interposed active layer and a top layer which may be disposed on the second passive layer. In the surface, a preferably V-shaped groove is provided on the side of the second passive layer, which groove extends at most over only part of the thickness of the second passive layer. According to the invention, the groove is filled selectively with a metal, preferably gold, up to the level of the surface, while on both sides of the groove there is present an insulating region, which is preferably obtained by proton implantation and does not extend up to the active layer. The invention also relates to a method in which the insulating region is provided in a self-aligned manner by ion implantation while using the metal as a mask. The groove is preferably filled with gold by an electroless method. |
