| 摘要 |
PURPOSE:To eliminate the need for processes of polishing, a cleaning, and etching a wafer, to save labor and time, and to prevent a sample surface from being contaminated with impurities by cleaving single crystal in its cleavage plane and evaluating characteristics of the crystal from the cleavage plane. CONSTITUTION:A single crystal ingot is cut into a (001) surface wafer 12 which is about 1mm thick firstly. Then, a flaw 13 in a <110> direction is made in a surface of the wafer 12 with a scriber and when the wafer is clamped with a pair of tweezers and cleaved in strips, it is easily cleaved along a (110) surface of the cleavage plane 15 to obtain a sample 14 for evaluation. In this case, the cleaved surface is the (110) surface of the cleavage plane 15, a mirror surface, and a surface formed by cleaving the crystal, so there is no contamination on the surface. Therefore, electric characteristics are checked on the cleavage plane 15. Further, its dislocation density is measured by etching the sample 15 with KOH, etc. The single crystal applied to this method is single crystal having a cleavage plane, e.g. III-V group compound (GaAs, etc.), II-VI group compound (ZnS, etc.), etc. in a periodic table. |
