发明名称 ELECTRODE WIRING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to obtain a wiring by performing a very simple process by a method wherein an electrode wiring is formed by injecting a fluid-state electrode wiring material from a nozzle. CONSTITUTION:The wafer 1 which is formed before an electrode wiring process is performed is arranged under nozzles 2. The nozzles 2 are arranged in such a manner that each nozzle 2 is positioned on the electrode part 3 of a semiconductor substrate 1. An electrode wiring material is flown into the nozzle 2 from an electrode wiring material storing part at a fixed pressure. An electrode wiring 4 is formed on the electrode part 3 by injecting a fixed quantity of the electrode wiring material.
申请公布号 JPS61166126(A) 申请公布日期 1986.07.26
申请号 JP19850006804 申请日期 1985.01.18
申请人 NEC CORP 发明人 KOMATSUZAKI KAZUHIRO
分类号 H01L21/283;H01L21/28;H01L21/288;(IPC1-7):H01L21/28 主分类号 H01L21/283
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