| 摘要 |
PURPOSE:To accurately measure the electric properties of a semiconductor element by forming a region made of substantially lattice electrode member through an insulating layer on an electrode plate, and setting larger surface area to a current electrode and smaller surface area to a voltage electrode. CONSTITUTION:Grooves are formed substantially in a lattice shape on the surface of an electrode plate 10, and the inner surface of the grooves are coated by an insulating layer 11. The electrode plate 12 is buried through the layer 11 in the grooves. The plate 12 having larger surface area is for a current electrode, and the plate having smaller surface area is for a voltage electrode. The thus formed electric property stage 20 is used to effectively contact a unit 13 to be measured with the voltage and current electrodes even if the unit 13 is a semiconductor ship or elements separated according to a chip area on a semiconductor wafer. Therefore, since the contacting resistance between the stage 20 and the unit 13 decreased, the measuring accuracy can be enhanced. |
