SEMICONDUCTOR DEVICE

摘要

PURPOSE:To accelerate the circuit actuation by reducing the change accumulated during actuation of transistors by a method wherein N-P-N transistor is isolated from the base region of P-N-P transistor to impress the N-P-N transistor with specified voltage. CONSTITUTION:N<+> type buried layers 2 are isolation-formed by means of im purity diffusing process on a P-type Si substrate 1 and then N-type epitaxial layer 11 is grown. Then oxide films 15 are formed by thermal oxidation. Next nitride films 16 are deposited and then other oxide films 6 are also formed by thermal oxidation and later the nitride films 16 and the oxide films 15 are removed to deposit polycrystalline silicon films 17. Then photoresist is etched in O2 gas until the polycrystalline silicon layers 17 in projected regions are exposed. Oxide films 14 are removed and the polycrystalline silicon films 17 are patterned to include longitudinal and lateral transistors forming lead-out electrodes. Finally nitride films 20 for passivation are deposited to make holes for collector lead-out electrodes forming these electrodes.