发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain excellent damp-proofing and high reliability by terminating an insulating film on the side inner than a dicing line region and coating the terminating surface of the insulating film with an inter-layer insulating film or apassivation film as the upper layer of the insulating film. CONSTITUTION:A polyimide resin film 6 having high hydroscopicity is coated completely with a passivation film 8 having low hydroscopicity, thus preventing the moisture absorption of the polyimide resin film 8. Accordingly, trouble on a semiconductor device having multilayer wiring structure, such as the corrosion of a wiring pattern, defective adhesion between an inter-layer insulating film and the wiring pattern, the deterioration of electrical characteristics such as leakage can be improved remarkably.
申请公布号 JPS61128546(A) 申请公布日期 1986.06.16
申请号 JP19840250256 申请日期 1984.11.27
申请人 TOSHIBA CORP 发明人 HATA SEIJI
分类号 H01L21/768;H01L21/31;H01L23/522 主分类号 H01L21/768
代理机构 代理人
主权项
地址
您可能感兴趣的专利