发明名称 HIGH FREQUENCY ION SOURCE
摘要 PURPOSE:To enable electrons to be supplied without using any electric power supply and without performing complicated controlling by installing a radiation source in the discharge chamber. CONSTITUTION:Xe gas is introduced into a discharge chamber 7 through a gas introduction system 5 to make Xe gas strike against radiation (alpha, beta<-> and gamma) discharged from a radiation source 10 thereby producing initial plasma. A high-frequency electric field produced by an induction coil 6 accelerates electrons in the thus produced initial plasma in the circumferential direction to cause the electrons to strike against Xe gas resulting in an increase of the plasma. This state continues for about several seconds until the amount of plasma disappearing and that of plasma produced on the wall surface become balanced with each other to attain equilibrium. Xe<+> ions in the plasma are accelerated by electrodes 2, 3 and 4 and then are led outside the high frequency ion source. 32Pb<210> which is a beta<-> radiation source having a half-life of 22 years an a radiant energy level of 61KeV can be suitably used as the radiation source 10.
申请公布号 JPS61126739(A) 申请公布日期 1986.06.14
申请号 JP19840246275 申请日期 1984.11.22
申请人 TOSHIBA CORP 发明人 YOSHIDA HIDEKI;SUGAWARA TORU
分类号 H01J27/08;F03H1/00;H01J27/02;H01J27/16;H05H1/22 主分类号 H01J27/08
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