Nonvolatile semiconductor memory device.

摘要

A nonvolatile semiconductor memory device has n<+>-type source and drain regions (SR, DR) formed in the surface of a p-type semiconductor substrate, a floating gate (FG) formed above and insulated from a channel region (CR) provided between the source and drain regions (SR, DR), and a control gate (CG) formed above and insulated from the floating gate (FG). The memory device further has a capacitor (16) provided between the control gate (CG) and drain region (DR).