| 摘要 |
PURPOSE:To eliminate a difference of the etching state between the outer peripheral part and center part of a matter to be etched on the surface of the substrate by a method wherein etching suppression gas introducing ports are provided in the electrode on the side of the face of the matter to be etched, whereon an etching treatment is performed, and etching suppression gas is made to flow in from the introducing ports. CONSTITUTION:When a substrate 16 is set up, cylindrical etching suppression gas introducing ports 17 are provided in an impressing electrode 15 at the stepped boundaries consisting of the outer periphery of the substrate 16 and the supporting face of the impressing electrode 15 in the outside to the substrate 16 and inactive gas is introduced at a proper amount through the introducing ports 17 in the course of etching. Whereupon the density of etching species in the outer peripheral part decreases and the precedence of etching in the outer peripheral part of the substrate 16 to etching in the center part of the substrate 16 is suppressed. As a result, an excellently uniform etching can be performed over the whole surface of a matter to be etched on the surface of the substrate 16. |
