| 摘要 |
PURPOSE:To obtain a high speed switching element capable of controlling the characteristics by a voltage by laminating the first superconductive electrode an interlayer insulating film and the second superconductive electrode, and providing in structure a channel made of a semiconductor, a gate insulating film and a control electrode at the ends. CONSTITUTION:An insulator layer 2 is formed on the surface of an Si substrate 1, an insulating film 8, a thin Nb film 3, an insulating film 9 and a thin Nb film 4 are sequentially accumulated in this order thereon, machined by etching in the desired shape to form the first superconductive electrode 3 and the second superconductive electrode 4. Then, a channel layer 5, an insulating film 6 and the third electrode 7 are formed. A superconductive transistor in this structure can alter the superconductive coupling state between the first and second superconductive electrodes 3 and 4 by a voltage applied to the electrode 7. Since the space distance of the electrodes 3, 4 is decided by the thickness of the film 9, fine size can be readily controlled, the yield in the manufacture can be enhanced, and the high speed switching element can be readily obtained. |
