Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth

摘要

The disclosure relates to a method for producing single crystal silicon from a polycrystalline silicon melt wherein dopants such as oxygen and nitrogen are uniformly distributed in the crystal both along the crystal axis and radially therefrom. This is accomplished by identifying the correct species in the melt and above the melt and determining the thermochemical equilibrium between the two chemical species which lead to a change of the composition of the silicon single crystal during the entire growth process. This approach effectively circumvents the segregation coefficient during the growth process through the control of the concentration of the dopants in the melt.