发明名称 |
Method of fabricating integrated circuits incorporating steps to detect presence of gettering sites. |
摘要 |
<p>57 A method of fabricating integrated circuits on a semiconductor substrate includes the steps of directing electromagnetic radiation onto the semiconductor substrate at a small angular offset from the substrate's Bragg angle; measuring the intensity of the radiation that is reflected from the semiconductor substrate at the offset; and continuing with the fabrication of circuits on the substrate only if the measured intensity is substantially larger than the intensity which would reflect at the same angular offset from a defect-free crystal of the substrate material.</p> |
申请公布号 |
EP0181737(A2) |
申请公布日期 |
1986.05.21 |
申请号 |
EP19850307851 |
申请日期 |
1985.10.30 |
申请人 |
BURROUGHS CORPORATION (A DELAWARE CORPORATION) |
发明人 |
NEMIROFF, MICHAEL HENRY |
分类号 |
H01L21/322;G01N23/20;G01L1/00;G01N23/207;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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