发明名称 Method of fabricating integrated circuits incorporating steps to detect presence of gettering sites.
摘要 <p>57 A method of fabricating integrated circuits on a semiconductor substrate includes the steps of directing electromagnetic radiation onto the semiconductor substrate at a small angular offset from the substrate's Bragg angle; measuring the intensity of the radiation that is reflected from the semiconductor substrate at the offset; and continuing with the fabrication of circuits on the substrate only if the measured intensity is substantially larger than the intensity which would reflect at the same angular offset from a defect-free crystal of the substrate material.</p>
申请公布号 EP0181737(A2) 申请公布日期 1986.05.21
申请号 EP19850307851 申请日期 1985.10.30
申请人 BURROUGHS CORPORATION (A DELAWARE CORPORATION) 发明人 NEMIROFF, MICHAEL HENRY
分类号 H01L21/322;G01N23/20;G01L1/00;G01N23/207;H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/322
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