发明名称 METHOD FOR DIFFUSING ZN INTO COMPOUND SEMICONDUCTOR OF INP SYSTEM
摘要 PURPOSE:To enable very stable and excellently reproducible diffusion having as a source Zn3P2 which is a product from thermal decomposition of ZnP2, by locally heating the ZnP2 portion after vacuum sealing to cause it to decompose, allowing it to condensate on the inner wall of a quartz tube, and then diffusing it. CONSTITUTION:Weighted ZnP2 5 is placed in a quartz tube 1 at one end thereof, and a InP wafer 3 is placed in the center of the tube 1. After vacuum sealing in a vacuum below 1X10<-6> torr, only the ZnP2 5 portion is heated with a burner 7 to decompose and allowed to condensate on a cooling portion 6. Thereafter, it is placed in a heat treatment furnace of 500 deg.C for, e.g., 20 minutes, thereby forming P-type layer which is about 2mum deep. At this time, if the amount of ZnP2 to be enclosed exceeds 0.2mg/cm<3>, the decomposition product of ZnP2 does not become Zn3P2, and the diffusion depth becomes shallow. Further, if the amount is less than 0.005mg/cm<3>, the saturated vapor pressure at 500 deg.C is not reached, thus providing inferior reproductivity of diffusion depth. Accordingly, if the amount of ZnP2 is set within the range of 0.005mg/cm<3>-0.2mg/cm<3>, ZnP2 decomposes into Zn3P2 and P4 and becomes easy to vaporize, exhibiting very good reproductivity.
申请公布号 JPS6199327(A) 申请公布日期 1986.05.17
申请号 JP19840209137 申请日期 1984.10.05
申请人 FUJITSU LTD 发明人 KAGAWA SHUZO
分类号 H01L21/22;H01L21/223;(IPC1-7):H01L21/22 主分类号 H01L21/22
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