| 摘要 |
PURPOSE:To make it possible to inspect uniformity of etching in-process, by sampling variable quantity of light reflected on the surface of a member to be etched at regular time intervals, and by converting the etching time, etching rate and CCD information into an etching depth. CONSTITUTION:Cylindrical lenses 13A, 13B and interfering filters 12A, 12B are arrayed in front of CCDs 14A, 14B respectively, so that one-dimensional informations averaged in parallel to and vertically to this paper-plane on the wafer 18 surface can be taken therein. The parallel and vertical informations are supplied therein through a half-mirror. For lighting for monitor, light from a light source 10 is focused by a lens 9, is reflected by a half-mirror and is supplied to the wafer 18. Outputs of the CCD 14A, 14B are fed to a data- processing apparatus 16, and an etching monitor controller 17 inspects uniformity ion the course of etching process and decides the final point to control the high frequency power source 4. Thus etching uniformity can be inspected in- process, and remarkable effects such as improvement of the precision, yield and efficiency can be attained in manufacture of LSI wafers. |
