| 摘要 |
PURPOSE:To produce a new type transistor by a method wherein a secondary carrier to be stored in a potential well produced by hetero junction of semiconductor or any other junction corresponding thereto is shifted to adjoining potential well. CONSTITUTION:In order to control the secondary electronic gas in a potential well, the proper film pressure (d) of an N type AlxGa1-xAs 20 is selected and a gate electrode 19 for Schottky junction is provided. On the other hand, a source electrode 18 ohmic-connecting to the secondary electrons in the potential well, a buried layer AlxGa1-xAs 24 and a drain electrode 17 ohmic-connecting to the secondary electrode gas in another potential well are respectively provided. |
