| 摘要 |
<p>A redundancy scheme for a dynamic memory is arranged to replace defective main memory cells with spare memory cells. The memory array is divided into first and second sectors (L, R), the first sector (L) containing a portion (184) of each main memory column and one or more spare columns (186), and the second sector (R) containing the remaining portion (188) of each main memory column and one or more spare columns (190). Means (192, 194, 196, 198) are provided for accessing the main memory columns and the spare memory columns such that, when a portion (184) of an addressed main column in said first sector (L) is defective and its remaining portion (188) in said second sector (R) is not defective, the non-defective portion (188) of said addressed column is accessed and a spare replacement column (186, 190) in one of said sectors (L, R) is accessed in place of the defective portion of the addressed column. Means (218, 220, 222) are provided for coupling the data associated with the accessed portion of the addressed column and the replacement spare column to a data output (200).</p> |
