| 摘要 |
PURPOSE:To obtain the method for manufacture of a highly precise blazed diffraction grating to be formed on an Si substrate by a method wherein a line-and-space is formed on a (100)Si single crystal substrate using a mask material, an etching having a vertical cross-section is performed using an Si anisotropic etchant. CONSTITUTION:A mask 12 is formed on a (100)Si substrate 11. A lithographic technique, wherein a resist is used, is utilized in forming a line-and-space using a mask material. An etching groove 13 having a vertical cross-section is formed on the (100)Si substrate 11 by performing a dry etching. Then, when an anisotropic etching is performed using hydrazine, a (111) plane appears on the side wall, the (111) plane on the side walls of both line-and-spaces are connected, the SiO212 which is a mask material is removed by exfoliation, and a blazed diffraction grating is formed on the part where the SiO212 is removed. |
