| 摘要 |
PURPOSE:To extend the life and to improve drift, by hydrolyzing the coated film of a specific org. metallic compd. coated on the gate surface of a field effect type transistor element when subjecting the film to a heating treatment to form a thin ion-sensitive glass film. CONSTITUTION:The soln. prepd. by dissolving the org. metallic compd. such as metallic alkoxide which can form the corresponding metallic oxide when dissolved to a volatile hydrophilic solvent (e.g.; metanol, etc.) and adding a lanthanum-contg. compd. thereto is coated on the gate surface of the field effect transistor element (IS-FET). The coated film is then rested and is gradually hydrolyzed to gel the film. When such geled film is heated to about 450-700 deg.C, the glassy oxide film contg. about 0.5-10mol% lanthanum oxide component is formed and the thin ion-sensitive glass film is obtd. The durability is thus improved and the responsiveness with ions is stabilized. The reduction in the weight and size of the IS-FET is made possible as well. |
