| 摘要 |
PURPOSE:To eliminate a floating gate effect, to form a light-shielding film and a first main electrode simultaneously and to reduce processes by using a conductive film as the light-shielding film for a semiconductor thin-film consisting of alpha-Si:H, etc. and short-circuiting the conductive film to the first main electrode. CONSTITUTION:A gate electrode 2 consisting of Cr is formed onto a glass plate 1, and an oxide film or an SiO2 film 3 for the electrode 2 and an alpha-Si:H thin-film 4 through optical CVD are shaped. First and second main electrodes 6 and 5 composed of Al are formed brought into contact with the thin-film 4, and the electrode 5 is extended onto the alpha-Si film 4 through an insulating film 7 consisting of SiO2, etc. and functions as a light-shielding film 8. One parts are superposed in a plane manner through the insulating film 7 in the light-shielding film 8 and the electrode 6, and optical leakage is inhibited. The insulating film 7 is made thicker than the electrode 6, and the value of permittivity/thickness of the film 7 is selected to a value smaller than the gate insulating film 3. According to the constitution, the light-shielding film does not function as a floating gate, and a thin-film transistor can be shaped by few manufacturing processes. |
