| 摘要 |
<p>PURPOSE:To permit the easy removal of the foreign matter sticking on a surface by depositing such a silicon dioxide film of which the free surface energy is decreased by the surface treatment on the surface on the side where a pattern exists thereby forming a reticle. CONSTITUTION:The film 3 of silicon dioxide is formed to about 0.05mum thickness by sputter deposition on the reticle for microprojection exposure where the chromium film 2 having the desired pattern exists on a glass plate 1. The surface of such film 3 is exposed for about 10min at an ordinary temp. to the vapor of trifluoropropyl methyldichlorosilane to form the sticking group 4 expressed by the formula on the surface of the film 3. The free surface energy of the reticle is made about 15mJ/m<2> which is approximate to the free surface energy of poly(tetrafluoroethylene) by such treatment. Since the layers of the film 3 and the group 4 are extremely thin, these layers do not disturb the transmission of the UV rays to be used for the exposure.</p> |
