发明名称 SPATTERING TARGET
摘要 PURPOSE:To obtain a spattering target enable to form the film compressed of a uniform composition by providing a target material corresponding to each component of the mixed component of the film in a plane and forming it so that the clearance between each target material is covered and the surface is made at a uniform plane levels. CONSTITUTION:In the target which forms the film of MoSi2 by spattering method, Mo and Si which are the mixed component film are used as a target material to form a target 20 in which the central part 21 comprised of Si and an external peripheral part 23, and an internal circle part 22 comprised of Mo are provided in a triple ring shaped plane. The internal circle part 22 is formed with T-shaped section and tip parts are formed respectively on edges opposed to the central part 21 and the internal part 22 of the external part 23 and fitted to the T-shaped part to cover the clearance and to form these upper surface at the same level. Thus, the generation of erosion of the target is suppressed, the variation of the spattering characteristic is prevented, the forming of the film of uniform component can be made possible and the life is prolonged.
申请公布号 JPS6167768(A) 申请公布日期 1986.04.07
申请号 JP19840189601 申请日期 1984.09.12
申请人 HITACHI LTD;HITACHI TOKYO ELECTRONICS CO LTD 发明人 NAKAMURA HIROSHI;KOJIMA GOSHI
分类号 C23C14/06;C23C14/34;H01L21/203;H01L21/285;H01L21/31 主分类号 C23C14/06
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