| 摘要 |
PURPOSE:To facilitate the increase of the capacity of a DRAM and miniaturization thereof by forming a capacitance section having a shape of which an electrode is formed onto the surface of an insulating film and an element isolation region section. CONSTITUTION:An etching mask material 102 is removed, and a dielectric film 105 is formed to the surface of a substrate. A capacitance section electrode 106 is shaped, and an inter-layer insulating film 107 is deposited while coating the electrode 106. The dielectric film 105 except a section coated with the capacitance section electrode 106 is removed, a gate film 108 for a MOS transistor is formed in the removed region, and gate electrodes 109 constituted by polysilicon, to which phosphorus is added, or a metal are shaped. An inter-layer insulating film 107 consisting of an silicon oxide film or an insulating film such as a PSG film is further applied, and N<+> regions 10 are formed as source/drain regions in the MOS transistor. openings 111 are shaped in the source/drain regions, and electrode wirings 112 are formed. |
