| 摘要 |
PURPOSE:To make longer the propagation delay time of each collector in order from the collectors, which are nearer to the injector, to the collectors, which become more distant from the injector, by a method wherein the forward breakdown voltage of each Schottky barrier diode, which is connected to each collector, is set higher in order. CONSTITUTION:Each collector C1, C2, C3 and C4 of a multicollector transistor T1 and each Schottky barrier diode (SBD) Z1, Z2, Z3 and Z4 are connected in between each collector and the base. The relations between the forward breakdown voltages of the SBDs are a relation of VZ1<=VZ2<=VZ3<=VZ4. Whereupon, as the saturated state of the collector C1 can be made shallowest and the logic amplitude thereof can be lessened, the relations between the propagation delay times tc1, tc2, tc3 and tc4 of the collectors become a relation of tc1<=tc2<=tc3<= tc4. |
