| 摘要 |
PURPOSE:To form a uniform thin film having high quality at a substantially high speed on a substrate surface by radiating UV rays from plasma by high-frequency or microwave electric power and irradiating directly the photoreactive gas released near the substrate. CONSTITUTION:This film forming device has a plasma region where the plasma P is formed by gas discharge and a region where the substrate 4 imposed on a substrate holder 3 is disposed and the film is formed on the surface thereof in one vessel 5. The gas G1 for radiation of UV rays consisting of rare gas, hydrogen, heavy hydrogen or a gaseous mixture contg. these gases is supplied through an introducing hole 9 into the vessel 5 of the above-mentioned film forming device. Electrodes 1, 1 are provided in proximity to the supply region thereof and the high-frequency electric power is impressed thereto to form the above-mentioned plasma P and to radiate about<= 160nm UV rays. On the other hand, the photoreactive gas G2 contg. silane, etc. which is the raw material for forming the film is released through an annular pipe 2 from the aperture thereof to the part near the substrate 4 and the above-mentioned UV rays are directly irradiated thereon to photodecompose said gas. The resultant product of the de composition is deposited on the substrate 4, by which the thin film of Si, etc. is formed thereon. |
