发明名称 FIELD EFFECT TYPE SEMICONDUCTOR DEVICE HAVING PROTECTION ELEMENT
摘要 PURPOSE:To prevent adverse effects from exerting on the titled device even after a surge voltage is impressed, by a method wherein a series connection of a resistance element made of poly Si and a diode is used as the protection element. CONSTITUTION:The resistor 13 made of poly Si is connected in series with the diode 4 and inserted between an input terminal 1 and a substrate 3. This manner leads the series connection of the resistor 13 made of poly Si with the diode to a parallel connection with the route of a protection resistor 5, a gate electrode G, and a source electrode S between the input terminal 1 and the substrate 3. When a surge of large current capacitance is impressed across the input terminal 1 and the substrate 3, the resistor 13 made of poly Si inhibits the current of the protection diode 4 to some degree, and this resistor 13 fuses by itself and separates off the protection diode 4 in emergency.
申请公布号 JPS6142170(A) 申请公布日期 1986.02.28
申请号 JP19840163066 申请日期 1984.08.02
申请人 NEC CORP 发明人 NISHIMURA EITETSU
分类号 H03F1/52;H01L27/02;H01L29/78;H02H7/20;H03F1/42 主分类号 H03F1/52
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