| 摘要 |
The invention relates to a method of forming the walls of an isolating pocket of the P<+> type inside a semiconductor slice 10. In order to form this pocket, aluminium 12 is deposited on the silicon, an aluminium/silicon micro-alloy 16 is formed by laser beam 14 following the outline of the pocket to be made. Then, after elimination of the non-alloyed aluminium, a heat treatment under oxygen is carried out in order to ensure the deep diffusion of the aluminium inside the silicon. This P<+> type diffusion constitutes the wall of the desired pocket. <IMAGE>
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