发明名称 MANUFACTURE OF SILICON FILM
摘要 PURPOSE:To reduce any dust content in film by a method wherein, before the surfaces of component members in a decompression chamber are coated with silicon or silicon containing material with the same composition as that of film forming material, hydrogen or argon containing gas is introduced to cause glow discharge phenomenon. CONSTITUTION:High purity hydrogen gas is introduced into a chamber 1 with substrates 5 removed from an inlet pipe 7 and then a cathode electrode 3 is supplied with high frequency power from an RF power supply 13 causing glow discharge while the hydrogen in chamber 1 is exhausted from an exhaust hole 10. After finishing this process, silane gas is introduced into the chamber 1 while the cathode electrode 3 is supplied with more RF power from the FR power supply 13 than that in case of forming an a-Si film causing the glow discharge to coat the surfaces of various jigs such as inner wall of chamber, adhesionproof sheet, anode electrode and cathode electrode etc. Through these procedures, the coating may be provided with more powerful adhesion.
申请公布号 JPS6134931(A) 申请公布日期 1986.02.19
申请号 JP19840154054 申请日期 1984.07.26
申请人 CANON INC 发明人 FURUSHIMA TERUHIKO;SHOJI TATSUMI;ITABASHI SATORU;KAWAKAMI SOICHIRO;FUKAYA MASAKI;YAMAGAMI ATSUSHI;SUGITA SATORU
分类号 C23C16/24;H01L21/205;H01L31/04 主分类号 C23C16/24
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