ION IMPLANTATION MASK DEVICE AND METHOD OF IMPLANTATION USING THIS DEVICE

摘要

PURPOSE:To enable ion implantation to be performed without causing contamination by using an ion implantation mask plate at least the ion-beam-side of which has a surface made of either the same material as the semi-conductive wafer or its oxide or nitride. CONSTITUTION:At least the ion-beam-source-side of an ion implantation mask plate 12 has a surface 14 which is made of either the same material as a semi- conductive wafer 1 or its oxide or nitride. As a result, either the same material as the wafer 1 of the same material as the wafer 1 and oxygen (or nitrogen) is sputtered outside the mask plate 12. When the same material as the wafer 1 is sputtered and enters the wafer 1, it is not contaminated. When the same material as the wafer 1 and oxygen or nitrogen is sputtered, the wafer 1 is not contaminated by the same material as the wafer 1 and oxygen or nitrogen gas is liberated from the surface of the wafer 1.