| 摘要 |
PURPOSE:To realize positioning in different shift amounts by forming an alignment mark where marks and spaces are formed alternately with the specified fine intervals to the photomask for manufacturing semiconductor device. CONSTITUTION:An alignment mark where marks 5 and spaces 6 are alternately formed is provided to the photomask of 2nd layer. On the other hand, the hatched area 7 is formed a silicon substrate for epitaxial growth. If there is no epitaxial shift, positioning is carried out as indicated in above figure. For the positioning to the epitaxial growth layer where epitaxial shift is generated, the alignment mark of photomask is deviated as large as epitaxial shift for positioning and the photo processing is then carried out. In case the alignment mark which can be positioned by deviation in the direction opposed to the epitaxial shift direction in the desired amount is used, the same alignment mark can be used even when film thickness of epitaxial growth film is changed and it is no longer necessary to form again the photo mask. |
