| 摘要 |
<p>An MIS transistor, which is built on an insulating layer (11) has the insulating layer (11) arranged with a thin portion (12) under the channel region (16) of the MIS transistor and a thick portion (13) under the remainder of the device, and has a conducting layer (19) formed beneath the insulating layer (11). Typically the device is a short channel MIS transistor having a channel length of 2.0 mu m or less. Such a transistor has the advantage that equipotential lines run generally parallel to the gate electrode (17) and have a reduced drain voltage feedback and an increased trans-conductance and punch-through voltage.</p> |
