| 摘要 |
PURPOSE:To enable register cells to execute the simultaneous reading and writing by inputting complementary signals to a pair of write lines so as to execute writing to a register cell and reading out the complementary signals on plural pairs of read lines different from the write lines. CONSTITUTION:Prior to reading, voltage of pairs of read lines B11-14 are precharged at high levels. At the time of reading, one or both if pairs of read word lines W11-14 are rised to high levels, and read n-MOSFET is conducted. Then voltages of the selected pairs of read lines B11-14 are changed complementarily in correspondence to voltages of respective terminals N1 and N2, and reading actions are executed. At the time of writing, voltages of a pair of write word lines W21-22 are rised to high levels, and write n-MOSFETQs 21- 22 are conducted, whereby complementary signals on a pair of write lines B21- 22 are written in the terminals N1 and N2. |
