发明名称 POLYACETYLENE SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF
摘要 PURPOSE:To implement high open-end voltage, by forming a polyacetylene polymer film having a thickness of 1mum or less on a glass substrate, on which an electrode material is evaporated, and forming a transparent conducting electrode on the polymer film. CONSTITUTION:A small amount of Ti(OC4H9)4-Al(C2H5)3 Ziegler catalyst with the mixed solution of n-heptane and toluene as a solvent is dripped on a glass substrate 3, on which a lower electrode 4 is evaporated, by a microsyringe, in a globe box containing inactive gas atmosphere. Thus a polyacetylene polymer film 2 having a thickness of 1mum or less is formed on the glass substrate 3. Then the catalyst is removed from the polyacetylene polymer film 2. Thereafter, the element is placed in a vacuum evaporating device. Before evaporation, thermal isomerization is performed in a vacuum degree of 10<-5>Torr for 5min at 150 deg.C. Thus the transformer type polyacetylene polymer film characterized by excellent conductivity and heat resistance is obtained. A transparent conducting electrode 1 is thinly evaporated. The element is returned to the globe box again, and the lower electrode 4 is extracted.
申请公布号 JPS60218883(A) 申请公布日期 1985.11.01
申请号 JP19840075446 申请日期 1984.04.14
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 EBISAWA FUMIHIRO;TABEI HISAO
分类号 H01L31/04;H01L51/30;H01L51/42 主分类号 H01L31/04
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