| 摘要 |
PURPOSE:To change a II-V group compound semiconductor thin-film into a semiconductor proper to an electronic device by implanting H or at least one kind of halogen elements during the manufacture or after the manufacture of the thin-film through a decompression vapor phase growth method, etc. CONSTITUTION:When a II-V group compound semiconductor thin-film consisting of ZnP, etc. is formed through a decompression or normal pressure vapor phase method, and optical vapor phase method, a plasma vapor phase method, glow discharge, sputtering, ion beams, an ion plating method, ion cluster beams, a molecular-beam epitaxial method, etc., intrinsic defects resulting from the holes of metallic atoms are generated, and performance is deteriorated extremely as an electronic device. H or at least one kind of halogen elements are implanted and diffused during the growth of the thin-film, or plasma, diffusion, ion implantation, ion plating, etc. may be applied after growth. Intrinsic defect level density can be reduced largely by the addition and processing, and a II-V group compound semiconductor composed of ZnP, etc. buried abundantly in the ground can be changed into one proper to the electronic device. |
