发明名称 ALIGNING MARK FOR ELECTRON BEAM EXPOSURE
摘要 PURPOSE:To prevent the deterioration of the mark detecting precision by a method wherein the aligning mark with a step difference part is made of a material of a density smaller than that of the material being used for the substrate. CONSTITUTION:A reflected electron signal reflected from a high-density material, such as gallium arsenide, gold, silver, molybdenum and so forth, undergoes a large fluctuation in the amount of reflected electrons due to the roughnesses of the materials. Therefore, the fluctuation of the reflected electron amount changes largely not only in the edge part of an aligning mark but also in the other parts of the mark. As a result, the S/N is lowered. Thereupon, the surface of an aligning mark part 11 consisting of a high-density material is contrived so as to coat with a coated film 12 made of a low-density material, such as silicon, silicon dioxide, aluminum and so forth. When such an aligning mark is formed, the S/N is sufficiently improved.
申请公布号 JPS60214527(A) 申请公布日期 1985.10.26
申请号 JP19840122972 申请日期 1984.04.09
申请人 FUJITSU KK 发明人 KOBAYASHI KOUICHI;OSADA TOSHIHIKO;OOTAKA TOSHIHIRO;SHIBATA SATORU
分类号 G03F9/00;H01L21/027;(IPC1-7):H01L21/30 主分类号 G03F9/00
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