发明名称 METHOD FOR FORMATION OF PATTERN
摘要 PURPOSE:To enable to control the two dimensional arrangement of a monomolecular film or a monomolecular accumulated film by a method wherein, after an ion beam has been scanned on the surface of a base in a reducing gas atomsphere, the monomolecular film or the monomolecular accumulated film is formed, and then a pattern is formed thereon. CONSTITUTION:For example, a glass substrate 1-1 whereon an ITO1-2 is deposited is used as a substrate. Hydrogen is flowed into the surface part of a base, an Si ion beam is scanned in the form of pattern, and a modified layer 1-3 is formed on the base. Then, a monomolecular accumulated film of arachidic acid is formed by performing an LB method using a chloroform solution of arachidic acid. A monomolecular accumulated film 1-5 of arachidic acid is not formed on a non-modified part 1-5, and it is formed on the modified part 1-4 only according to the pattern.
申请公布号 JPS60211924(A) 申请公布日期 1985.10.24
申请号 JP19840067581 申请日期 1984.04.06
申请人 CANON KK 发明人 HIRAI YUTAKA;MATSUDA HIROSHI;TOMITA YOSHINORI
分类号 H01L51/05;H01L21/304;H01L21/312;H01L21/368;H01L31/18;H01L49/02;H01L51/40 主分类号 H01L51/05
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