发明名称 |
Solid state image sensor |
摘要 |
A solid state image sensor with a plurality of cells comprising a photoelectric converting film formed on a semiconductor substrate for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas for storing said signal charge formed in said substrate, signal charge read out areas for reading out said signal charge from said storage area, conductor electrodes for making said photoelectric converting film electrically contact with said signal charge storage areas to lead said signal charge from said photoelectric converting film to said storage areas, and series of said conductor electrodes arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by 1/2 of the length of one electrode one from the other as viewed in the column direction.
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申请公布号 |
US4543489(A) |
申请公布日期 |
1985.09.24 |
申请号 |
US19850706254 |
申请日期 |
1985.02.28 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
HARADA, NOZOMU;ENDO, YUKIO;YOSHIDA, OKIO;MATSUNAGA, YOSHIYUKI |
分类号 |
H01L27/146;H04N3/15;H04N9/04;(IPC1-7):H01J40/14 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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