发明名称 |
Level substrate for semiconducting devices and method for fabricating same. |
摘要 |
<p>An improved semiconductor device includes a substrate (11) having a deposition surface, including at least one defect region (30, 32) capable of providing a low resistance shunt path or a nucleation centre, a relatively thick, continuous, electrically conductive leveling layer (26) electroplated on the deposition surface to provide a substantially defect-free surface, and a semiconductor body (27) deposited on the leveling layer. The substrate (11) is formed of aluminium or stainless steel while the leveling layer is preferably formed of nickel or silver.</p> |
申请公布号 |
EP0155125(A2) |
申请公布日期 |
1985.09.18 |
申请号 |
EP19850301402 |
申请日期 |
1985.02.28 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
NATH, PREM;IZU, MASATSUGU;OVSHINSKY, HERBERT C.;TENNENHOUSE, CLIFFORD;YOUNG, JAMES |
分类号 |
H01L31/04;H01L21/20;H01L31/0392;(IPC1-7):H01L31/02 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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