| 摘要 |
PURPOSE:To improve the light yielding efficiency, by providing a region without an electrode near a place directly below a light-emitting region on a light-reflecting face and an opposite surface of the element. CONSTITUTION:A region without an electrode 8 is provided on a light-reflecting face 13 near a place directly below a light-emitting region 9. As a result, on the reflecting face 13, no alloy reaction occurs between the electrode 8 and a semiconductor layer 6 and therefore a good mirror face condition can be maintained to allow approximately all the incident light to be reflected by the face 13. Moreover, the serial resistance can be effectively prevented from decreasing by forming a low resistance region 11 doped in high concentration and havig a resistivity of 0.1OMEGAcm or less. The area of this region without alloy reaction will be sufficient if the diameter thereof is equal to or slightly smaller than that of the light-emitting region. |
