发明名称 |
GROWING METHOD OF GALLIUM NITRIDE |
摘要 |
PURPOSE:To obtain a grown layer which has good surface flatness and crystallinity by performing the step of forming GaN on a crystalline substrate by the first step of executing in an inert atmosphere and the second step of performing in a hydrogen atmosphere. CONSTITUTION:The step of forming GaN on a crystalline substrate 4 is performed by the reaction of organic gallium compound with ammonia. In this case, the step is performed by the first step of executing in an inert atmosphere and the second step of performing in a hydrogen atmosphere. Organic gallium compound is selected from trimethyl gallium or triethyl gallium. Thus, a colorless, transparent, smooth-surface GaN crystalline layer is obtained on the substrate 4. |
申请公布号 |
JPS60175412(A) |
申请公布日期 |
1985.09.09 |
申请号 |
JP19840030805 |
申请日期 |
1984.02.21 |
申请人 |
MATSUSHITA DENKI SANGYO KK |
发明人 |
KAWABATA TOSHIHARU;FURUIKE SUSUMU;MATSUDA TOSHIO |
分类号 |
H01L21/205;H01L33/32;H01L33/34 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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