| 摘要 |
PURPOSE:To ultrafinely etch in an anisotropic manner by supplying the first gas which contains halogen element and the second gas which contains C and O to a vessel which contains a sample, emitting a light, and accumulating a film during etching. CONSTITUTION:A sample 12 in which a W32 and a resist mask 33 are laminated on an Si substrate 31 is disposed in a vessel 11, Cl2 and W(CO)6 are supplied, the W32 is etched with Cl radical generated by the vertical emission of ultraviolet rays 19 having 300-400nm of wavelength, and the W(CO)6 is ionized by infrared ray 22 having 1mum of wavelength, thereby forming a novel thin W film 34. The accumulating reaction and the etching reaction compete, thereby performing an anisotropic ething without an undercut. The sample is a high melting point metal or its silicide or a semiconductor material, and the mask may be separately formed. The first gas is halogen or gas containing C, B or H in the halogen, and the second gas is a sample. According to this configuration, the anisotropic etching can be performed without irradiation damage on the sample. |
